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Semiconductor physics, quantum electronics & optoelectronics : international scientific journal.- Kyiv- Title.
- Content.
- Klad'ko V. P., Kuchuk A. V., Safryuk N. V., Machulin V. F., Belyaev A. E., Konakova R. V., Yavich B. S. X-ray diffraction study of deformation state in InGaN/GaN multilayered structures. - C. 1-7.
- Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Konakova R. V., Kladko V. P., Kudryk Ya. Ya., Kuchuk A. V., Lytvyn O. S., Milenin V. V., Korostinskaya T. V., Ataubaeva A. B., Nevolin P. V. The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts. - C. 8-11.
- Bunak S. V., Buyanin A. A., Ilchenko V. V., Marin V. V., Melnik V. P., Khacevich I. M., Tretyak O. V., Shkavro A. G. Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2. - C. 12-18.
- Kolomzarov Yu., Oleksenko P., Rybalochka A., Sorokin V., Tytarenko P., Zelinskyy R. ITO layers modified in glow discharge plasma for Nematic Liquid Crystal alignment. - C. 19-23.
- Lee S. W., Vlaskina S. I., Vlaskin V. I., Zaharchenko I. V., Gubanov V. A., Mishinova G. N., Svechnikov G. S., Rodionov V. E., Podlasov S. A. Silicon carbide defects and luminescence centers in current heated 6H-SiC. - C. 24-29.
- Hontaruk O., Konoreva O., Litovchenko P., Manzhara V., Opilat V., Pinkovska M., Tartachnyk V. Radiative recombination in initial and electron-irradiated GaP crystals. - C. 30-35.
- Lytvyn P. M., Olikh O. Ya., Lytvyn O. S., Dyachyns'ka O. M., Prokopenko I. V. Ultrasonic assisted nanomanipulations with atomic force microscope. - C. 36-42.
- Savchenko D. V., Poppl A., Kalabukhova E. N., Venger E. F., Gadzira M. P., Gnesin G. G. Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by pulsed magnetic resonance methods. - C. 43-50.
- Litovchenko V. G., Grygoriev A. A. Electron-hole Fermi liquid in nanosized semiconductor structures. - C. 51-57.
- Kovalenko N. O., Zagoruiko Yu. A., Fedorenko O. O., Kuzminov E. A. Photoluminescent properties of crystalline solid solution Zn1-xMgxSe:Cr2+, a new active material for tunable IR. - C. 58-60 lasers.
- Bilozertseva V. I., Khlyap H. M., Shkumbatyuk P. S., Dyakonenko N. L., Mamaluy A. O., Gaman D. O. Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties. - C. 61-64.
- Goloborodko N. S., Grygoruk V. I., Kurashov V. N., Podanchuk D. V., Goloborodko A. A., Kotov M. M. Surface defects determining by the wave front scanner. - C. 65-69.
- Zelensky S. E., Kopyshinsky O. V., Garashchenko V. V., Kolesnik A. S., Stadnytskyi V. M., Zelenska K. S., Shynkarenko Ye . V. Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation. - C. 70-73 .
- Smyntyna V. A., Sviridova O. V. Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing. - C. 74-78.
- Veleschuk V. P., Lyashenko O. V., Vlasenko Z. K., Kysselyuk M. P. Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures. - C. 79-83.
- Semenov V. V., Blonskyi I. V., Gryts' V. G. Compact laser probe for surface acoustic waves. - C. 84-86.
- Trachevsky V. V., Steblenko L. P., Demchenko P. Y., Koplak O. V., Kuryliuk A. M., Melnik A. K. Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field. - C. 87-90.
- Ilashchuk М. I., Parfenyuk, Ulyanytskiy K. S., Brus V. V., Vakhnyak N. D. Influence of Cr doping on optical and photoluminescent properties of CdTe. - C. 91-94 .
- Tretyak O. V., Kozonushchenko O. I., Krivokhizha K. V., Revenko A. S. Spin-dependent current in silicon p-n junction diodes. - C. 95-97 .
- Borovytsky V. N. Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination. - C. 98-102.
- Lysiuk V. O., Moskalenko N. L., Staschuk V. S., Kluy M. I., Vakulenko O. V., Androsyuk I. G., Surmach M. A., Pogoda V. I. Formation of blisters in thin metal films on lithium niobate implanted by keV Ar+ ions. - C. 103-109.
| 2010 | Vol. 13 | № 1
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