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Загальна кількість знайдених документів : 2
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Luchenko A. I. Photoelectrical properties of nanoporous silicon [Електронний ресурс] / A. I. Luchenko, K. V. Svezhentsova, M. M. Melnichenko // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 3. - С. 298-301. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_3_22 The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties of heterojunctions has been studied. The current-voltage characteristics of nanoporous Si with various nanocrystal dimensions were measured. It was ascertained that lux-ampere characteristics have a linear range and sublinear one, which almost reaches the asymptote at the intensity of light above 10,000 lux. Nanoporous Si on the substrate of Si single-crystal has increased sensitivity to the humidity in comparison with that of metallurgical Si. The obtained results can be applied for development of highly sensitive sensors of humidity.
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Luchenko A. I. Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon [Електронний ресурс] / A. I. Luchenko, M. M. Melnichenko, K. V. Svezhentsova // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 4. - С. 333-337. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_4_7 Nanostructured silicon layers (3 - 60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm<^>2), multicrystalline and metallurgical silicon by stain etching. We studied optical and structural properties of nanostructured silicon using scanning tunnel microscopy, scanning electron microscopy, Auger electron spectroscopy, secondary ion mass spectrometry, and photoluminescence methods. Results of studying the nanostructured Si properties obtained using the method of chemical processing have confirmed an opportunity to create this multifunctional material with stable characteristics. The authors have developed the sensor systems with use of nanostructured silicon as a sensitive layer, which properties depend on thickness of the obtained layer and are controlled by parameters of the respective technological process. Using the example of the photoluminescent sensor with the nanostructured Si layer, it has been shown that such a sensor can be successfully used to detect small concentrations of toxins (pesticides phosalone 10<^>-8 - 10<^>-9 mol/l) as well as for specific biological pollutants, such as protein components, polysaccharides, cells worsening the quality of products of biotechnological synthesis.
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