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Загальна кількість знайдених документів : 5
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1.

Sabov T. M. 
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient [Електронний ресурс] / T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, O. Yo. Gudymenko, N. V. Safriuk // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 153-158. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_3
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature <$E200~symbol Р roman C> by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at <$Ex~symbol О~2>) film with the TCR close to <$E7,0~% "/" ~symbol Р roman C>.
Попередній перегляд:   Завантажити - 379.631 Kb    Зміст випуску    Реферативна БД     Цитування
2.

Korotyeyev V. V. 
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization [Електронний ресурс] / V. V. Korotyeyev, V. O. Kochelap, S. V. Sapon, B. M. Romaniuk, V. P. Melnik, O. V. Dubikovskyi, T. M. Sabov // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 3. - С. 294-306. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_3_14
Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p-doping, finite thickness of the quasi-neutral regions and possible non-uniformity of the bulk recombination coefficient. The theory is based on related solutions of the Poisson equation, drift-diffusion equation and continuity equation with a generation-recombination term taking into account the simple band-to-band generation/recombination model. We have ascertained that the non-uniform profile of p-doping can lead to formation of p-n junctions with a specific two-slope form of the electrostatic barrier and two regions with the high built-in electric fields. We have found that at strong p<^>+-doping the band structure of the InSb p-n junction has the form that can facilitate the emergence of additional mechanisms of current flow due to the tunneling and avalanche effects at the reverse bias. Using the literary data of the electron and hole lifetimes in InSb at cryogenic temperatures, we have found that the coefficient of bulk recombination can have an essential spatial dependence and considerably increases in the space charge region of p-n diode. The theory was applied to our analysis of p-n InSb diodes with p<^>+-doping by using Be-ion implantation performed in ISP NASU. The theory predicts optimal conditions for detection of infrared emission. The technological process of fabrication, processing and testing has been described in details. Theoretically, it has been found that for parameters of the fabricated diodes and at 77 K the dark currents limited by diffusion and generation-recombination mechanisms should be less than 0,1 mu A at the inverse bias of the order of 0,1 V. The measured diode's I-V characteristics were expected to have strong asymmetry, however, dark currents are by one order larger than those predicted by theory. The latter can be associated with additional current mechanisms, namely: tunneling and avalanche effects.
Попередній перегляд:   Завантажити - 2.05 Mb    Зміст випуску    Реферативна БД     Цитування
3.

Liubchenko O. I. 
The effect of ion implantation on structural damage in compositionally graded AlGaN layers [Електронний ресурс] / O. I. Liubchenko, V. P. Kladko, H. V. Stanchu, T. M. Sabov, V. P. Melnik, S. B. Kryvyi, A. E. Belyaev // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 1. - С. 119-129. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_1_20
Compositionally graded AlxGa1-xN alloys with the Al concentration in the (<$E7~symbol Г~x~symbol Г~32>) range were implanted with Ar<^>+ ions to study the structural and strain changes (strain engineering). It was shown that ion implantation leads to ~0,3 - 0,46 % hydrostatic strains and a relatively low damage of the crystal structure. The ion-implantation leads mainly to an increase of the density of point defects, while the dislocation configuration is almost unaffected. The density of microdefects is sufficiently reduced after the postimplantation annealing. The structural quality of the AlxGa1-xN layers strongly depends on the Al concentration and is worsen with increasing Al. The implantation induced structural changes in highly dislocated AlxGa1-xN layers are generally less pronounced. Based on the X-ray diffraction, a model is developed to explain the strain field behavior in the AlxGa1-xN heterostructures by migration of point defects and strain field redistribution. The approach to simulate <$E2 theta "/" omega> scans using statistical dynamical theory of X-ray diffraction for implanted compositionally graded structures AlGaN has been developed.
Попередній перегляд:   Завантажити - 2.844 Mb    Зміст випуску    Реферативна БД     Цитування
4.

Matyash I. 
Optical Properties of Vanadium Oxide Films [Електронний ресурс] / I. Matyash, I. Minailova, O. Gudymenko, T. Sabov, O. Dubikovskyi, O. Kosulya, O. Kulbachynskyi, P. Lytvyn // Journal of Nano- and Electronic Physics. - 2023. - Vol. 15, no. 6. - С. 06008-1-06008-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2023_15_6_10
Попередній перегляд:   Завантажити - 603.248 Kb    Зміст випуску     Цитування
5.

Yukhymchuk V. O. 
Structural and morphological properties of nanometer carbon films obtained by electron beam sputtering of graphite [Електронний ресурс] / V. O. Yukhymchuk, V. M. Dzhagan, O. F. Isaieva, P. M. Lytvyn, A. A. Korchovyi, T. M. Sabov, V. B. Lozinskii, V. S. Yefanov, V. O. Osokin, Yu. A. Kurapov // Ukrainian journal of physics. - 2023. - Vol. 68, № 11. - С. 764-771. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2023_68_11_7
Попередній перегляд:   Завантажити - 1.007 Mb    Зміст випуску     Цитування
 
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