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Загальна кількість знайдених документів : 4
Представлено документи з 1 до 4
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Zorenko A. V. Development and investigation of microwave radiation sources and detector sections using SBDs within the 220-400 GHz frequency range [Електронний ресурс] / A. V. Zorenko, Ya. Ya. Kudryk, Yu. V. Marunenko // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 4. - С. 411-415. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_4_8 A procedure of mm- and submm-wave devices simulation based on the up-to-date simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on IMPATT diodes and frequency multipliers with frequency output of 280 GHz as well as detector sections with Schottky barrier diodes for the 220 - 325 GHz and 325 - 400 GHz frequency ranges.
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Zorenko A. V. A subharmonic mixer for the 220-325 GHz frequency range [Електронний ресурс] / A. V. Zorenko, N. V. Kolesnik, T. V. Kritskaya, Ya. Ya. Kudryk, Yu. V. Marunenko, L. P. Ryzhanovich // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 84-85. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_15 We have made a subharmonic mixer (SHM) for the 220 - 325 GHz frequency range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The subharmonic mixer design was based on a GaAs mixer Schottky barrier diode with beam leads on a quartz 25-<$Emu>m thick microwave board. The microwave board was placed in a package with a waveguide channel of local oscillator input (cross-sectional area <$E1,2~times~2,4> mm<^>2) and waveguide channel of signal input (cross-sectional area <$E0,4~times~0,8> mm<^>2). The IF signal goes out through a subminiature A-connector, wave impedance of which is 50 Ohm.
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Zorenko A. V. Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range [Електронний ресурс] / A. V. Zorenko, A. V. Bychok, V. V. Shynkarenko, Ya. Ya. Kudryk, V. S. Slipokurov // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 346-348. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_8 A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400 - 600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio at a frequency of 420 GHz is 97 V/W.
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Belyaev A. E. Ohmic contacts based on Pd to indium phosphide Gunn diodes [Електронний ресурс] / A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, A. V. Zorenko, I. N. Arsentiev, V. P. Kladko, V. M. Kovtonyuk, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko // Semiconductor physics quantum electronics & optoelectronics. - 2015. - Vol. 18, № 3. - С. 317-323. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_3_16 Experimental data on manufacturing the ohmic contacts Au - Ti - Pd - n+ - InP, formed using vacuum deposition of metal onto a heated to <$E300~symbol Р roman C> substrate representing an epitaxial n<^>+-n-n<^>++-n<^>+++-InP structure. The specific contact resistance measured at room temperature was about <$E7~cdot~10 sup -5 ~roman {Ohm~cdot~cm sup 2 }>. Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2,2 A), generated the microwave power ~ 10 mW in the V-band.
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