Khyzhun O. Yu X-ray photoelectron spectroscopy study of the electronic structure of NbSe2 synthesized at high pressure / O. Yu Khyzhun // Физика и техника высоких давлений. - 2000. - 10, № 3. - С. 95-101. - Библиогр.: 36 назв. - англ.An X-ray photoelectron spectroscopy (XPS) method was used to investigate the electronic structure of niobium diselenide 4H(b)-NbSe2 synthesized at high pressures (7,7 - 9,0 GPa). For comparison, the electronic structure of an initial polymorphous form of niobium diselenide, 2H-NbSe2, was also studied. The XPS core-level binding energies (BEs) and valence-band structures for the two NbSe2 modifications have been determined. The XPS core-level BEs of pure niobium and selenium were also investigated. It is shown that, in the 2H-NbSe2 and 4H(b)-NbSe2 diselenides, a charge transfer occurs from Nb to Se atoms. The XPS core-level BEs of both niobium and selenium atoms remain constant (within the experimental errors) for the above NbSe2 polytypes studied. In the sequence 2H - NbSe2 -> 4 H(b) - NbSe2 a small increase of the XPS valence-band half-width was observed. The present experimental results are compared with earlier theoretical studies of niobium diselenide. Індекс рубрикатора НБУВ: В379.4
Шифр НБУВ: Ж14388 Пошук видання у каталогах НБУВ
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