Представлены результаты плазмохимического травления эпитаксиальных структур нитрида галлия на сапфировой подложке. Травление проводилось в плазмохимическом реакторе с замкнутым дрейфом электронов. Рабочие газы - <$Eroman ССl sub 4> и его смеси с <$Eroman О sub 2> или Аr. Маской служил никель толщиной 0,5 - 0,8 мкм. Получена усредненная скорость травления сложных эпитаксиальных структур с нитридом галлия <$E540~ roman {A back 35 up 35 symbol Р "/"мин}> с учетом травления сапфира.

The results of the plasma-chemical etchings GaN are submitted. The etching was realized in the reactor with closed drift of electrons. Energy of the plasma ions was controlled from 60 up to 400 eV by means of controlled magnetic fields. The four-chloride carbon and its mixes with oxygen and argon was used as working gases. The surface charge destruction of the GaN samples on sapphire substrates was carried out. The heating of the experimental samples was carried out for increase of the etching speed and improvement of their surface quality. The nickel films by thickness <$E0,5~-~0,8~ mu roman m> was used as a mask. The possibility of GaN etching at the large ion energies was investigated. It was established that at ion energies <$Esymbol Ы ~400~ roman eV> the nickel mask was quickly sprayed. At low energies of ions <$Esymbol Ы ~250~ roman eV> the nickel mask don't destruct during etching nitride of gallium film by thickness <$E1~ mu roman m> and etching of sapphire on depth <$E0,З~ mu roman m>. The etching speed of complicated GaN epitaxial structures received in our experiments was <$E540~ roman {A back 35 up 35 symbol Р "/"мин}>. By means of the GaN epitaxial structures etching the high temperature Hall sensors was produced.

• Іванов Вадим Миколайович (1892–1962) (медичні науки)

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