The influence of the annealing (at <$E Т sub anneal. ~=~ 1200~symbol Р>C) and different rates of cooling (from <$E Т sub anneal.> to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of <$E {roman (SiO)} sub x ,~{roman (SiO} sub 2 ) sub х }> or <$E {roman Si} sub x {roman O} sub y> types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (<$E Т sub anneal. ~=~ 1200~symbol Р>C) results in essential increase of magnetoresistance <$E rho sub H sup {symbol <94>} "/" rho sub 0> (approximately 2 - 2,5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of <$E rho sub H sup {symbol <94>} "/" rho sub 0> on magnetic field <$E H> in this region in the following form <$E rho sub H sup {symbol <94>} "/" rho sub 0> <$E H sup 1>.

Індекс рубрикатора НБУВ: В377.3

Рубрики:

Магнітні властивості твердих тіл. Магнетики

Шифр НБУВ: Ж16425 Пошук видання у каталогах НБУВ 

---

  Якщо, ви не знайшли інформацію про автора(ів) публікації, маєте бажання виправити або відобразити більш докладну інформацію про науковців України запрошуємо заповнити "Анкету науковця"