In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as longitudinal (in plane of the wafer) and transversal (perpendicular to it) diode current flow have been considered. It is shown that at small strains, the diodes located on the surface of (111)-Si are less subjected (as a whole) to their influence. Furthermore, the change in the intrinsic carrier concentration has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown to increase by several orders of magnitude irrespective of the strain sign.

• Борблик Віталій Леонідович (фізико-математичні науки)

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