A comparative analysis of published experimental data about the concentration, capture cross section and type of traps in CdTe:Cl has been carried out. Based on the performed analysis an identification of registered levels on acceptor and donor type was realized. The numerical simulations have been performed to study the effect of radiation defects arising under the influence of hard X-ray irradiation on the electrical and detector properties of cadmium telluride. The role of radiation-induced and background defects has been determined for the processes of degradation of the spectroscopic characteristics of CdTe:Cl detectors operated under conditions of ionizing radiation.

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