The possibility to create uncooled photodetector (PD) in the region close to <$Elambda~=~10~mu roman m> being based on p(Pb1-xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on p(Pb1-xSnxSe)-n(CdSe) heterojunction in which broad-band CdSe layer is located on the illuminated surface and plays the role of the optical filter with respect to the lower layer of ternary compound. The PD spectral characteristics at room temperature have been researched, which confirms the photoactivity of both heterojunction layers. The mechanism of current flow in the PD structure based on the above heterojunction and the mechanism of the PD samples sensitivity at room temperature in the far infrared spectrum, the determining factor of which is the amount of wide-gap semiconductors where space charge-limited current appears, have been investigated. The uncooled PD detectability typical for polycrystalline structures <$E10 sup 6 ~-~10 sup 7 ~roman {cm~cdot~Hz sup {1 "/" 2} "/" W}> has been discovered.

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