Semiconductors have various useful properties that can be exploited for the realization of a large number of high performance devices in fields such as electronics and optoelectronics. Many novel semiconductors, especially in the form of thin films, are continually being developed. Thin films have drawn the attention of many researchers because of their numerous applications. As the film becomes thinner, the properties acquire greater importance in the miniaturization of elements such as resistors, transistors, capacitors, and solar cells. In the present work, copper selenide (CuSe), cadmium selenide (CdSe), zinc selenide (ZnSe), lead sulphide (PbS), zinc sulphide (ZnS), and cadmium sulphide (CdS) thin films were prepared by chemical bath deposition (CBD) method. The prepared thin films were analyzed by using Hall measurements in Van Der Pauw configuration (ECOPIA HMS-3000) at room temperature. The Hall parameters such as Hall mobility of the material, resistivity, carrier concentration, Hall coefficient and conductivity were determined. The DC electrical conductivity measurements were also carried out for the thin films using the conventional two і probe technique. The activation energies were also calculated from DC conductivity studies.

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