Influence of the composition variation along the quasi-binary line GeTe - Sb₂Te₃ on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high See-beck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe - Sb₂Te₃ from GeSb₄Te₇ to GeSb₂Te₄, and then to Ge₂Sb₂Te₂, while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films haw three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport.

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