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Загальна кількість знайдених документів : 63
Представлено документи з 1 до 20
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Movchan O. V. Analysis of the stability of alpha ->> gamma plane front of recrystallization in ferritic alloys during carburization // Metallophysics and Advanced Technologies. - 2019. - 41, № 1.
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Sidelnikova N. S. Charge state of the activator in Ti:sapphire crystals grown by HDC method // Functional Materials. - 2015. - 22, № 4.
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Shlegel V. N. Comparison of the quality of Bi12GeO20 crystals grown by the conventional and low-temperature-gradient Czochralski techniques // Functional Materials. - 2010. - 17, № 4.
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Savchenko D. V. Continuous wave and pulsed EPR study of Cd1 - xMnxTe crystals with different Mn content // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2022. - 25, № 3.
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Nevludov I. Sh. Crystallization processes of oxide films on the metal/oxide surface // Functional Materials. - 2020. - 27, № 2.
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Rubish V. M. Crystallization study of (As2S3)100-x(SbSI)x amorphous films by the optical method // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 3.
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Tsybulenko V. V. Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - 23, № 3.
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Galashov E. N. Growing of 106CdWO4, ZnWO4, and ZnMoO4 scintillation crystals for rare events search by low thermal gradient Czochralski technique // Functional Materials. - 2010. - 17, № 4.
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Rybak O. V. Growth and properties of Cd-doped PbI2 crystals // J. of Nano- and Electronic Physics. - 2020. - 12, № 1.
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Kosmyna M. B. Growth and spectroscopy of new laser crystals Ca10Yb0,3K0,1(VO4)7 // Functional Materials. - 2012. - 19, № 4.
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Bagmut A. G. Growth of crystals with bent crystalline lattice in amorphous semiconductor films // Functional Materials. - 2008. - 15, № 3.
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Halyan V. V. Growth of the (Ga69,5La29,5Er)2S300 single crystal and mechanism of Stokes emission // Журн. нано- та електрон. фізики. - 2019. - 11, № 1.
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Bovda O. M. Hard-magnetic melt-spun R - Fe - B alloys on the base of light rare-earth metals (R = La, Nd) // Functional Materials. - 2013. - 20, № 2.
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Baumer V. N. Influence of growth conditions on chemical composition and properties of borate crystals for laser application // Functional Materials. - 2016. - 23, № 4.
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Rudenko R. M. Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin // Укр. фіз. журн.. - 2013. - 58, № 8.
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Druzhynin A. InSb microcrystals for sensor electronics // Computational Problems of Electrical Eng.. - 2014. - 4, № 1.
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Bagmut A. G. Kinetics of crystals growth under electron-beam crystallization of amorphous films of hafnium dioxide // Functional Materials. - 2018. - 25, № 3.
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Bashmakova N. V. Li2Zn2(MoO4)3 crystal as a potential detector for <$E bold {nothing sup 100 roman Mo}> 2<$E bold beta>-decay search // Functional Materials. - 2009. - 16, № 3.
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Kosushkin V. G. Morphological features of gallium arsenide crystals grown at low-frequency influences to the crystallization front // Журн. нано- та електрон. фізики. - 2014. - 6, № 3.
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Baranskii P. I. Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 3.
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