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Загальна кількість знайдених документів : 157
Представлено документи з 1 до 20
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Borkovskaya L. V. About the nature of diffusion anisotropy in CdS crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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Karachevtseva L. A. Bolometric characteristics of macroporous silicon structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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Matkivsky O. M. Composite thermoelectric materials based on lead telluride and cadmium telluride // Фізика і хімія твердого тіла. - 2017. - 18, № 4.
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Romaka V. A. Conditions for the maximal thermoelectric power factor yield in intermetallic semiconductors ZrNiSn and TiCoSb. — 2006 // Укр. фіз. журн.
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Kostyuk O. Development of Spark Plasma Sintering (SPS) for preparation of nanocrystalline p-type Bi0,5Sb1,5Te3 thermoelectric material // Фізика і хімія твердого тіла. - 2020. - 21, № 4.
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Bharat Singh Double peak behavior of resistivity-temperature curves in (Nd/Pr)0,67Sr0,33MnO3 manganites // Журн. нано- та електрон. фізики. - 2014. - 6, № 2.
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Rogacheva E. I. Effect of aging on thermoelectric properties of the Bi2Te3 polycrystals and thin films // Functional Materials. - 2021. - 28, № 1.
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Sharma K. Effect of composition on optical and thermoelectric properties of microstructured p-type (Bi2Te3)x(Sb2Te3)1-x alloys // Журн. нано- та електрон. фізики. - 2014. - 6, № 1.
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Rogacheva E. I. Effect of deviation from stoichiometry on thermoelectric properties of Bi2Te3 polycrystals and thin films in the temperature range 77 - 300 K // J. of Nano- and Electronic Physics. - 2019. - 11, № 5.
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Ashok Rao Effect of electron beam irradiation on structural, electrical and thermo-electric power of La0,8Sr0,2MnO3 // Журн. нано- та електрон. фізики. - 2015. - 7, № 1.
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Vdovych A. S. Electrocaloric effect in KH2PO4 family crystals // Condensed Matter Physics. - 2014. - 17, № 4.
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Lazarenko P. I. Influence of the composition on the thermoelectric and electro-physical properties of Ge - Sb - Te thin films for phase change memory application // Журн. нано- та електрон. фізики. - 2016. - 8, № 3.
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Shtern Yu. I. Investigation of nanostructured thermoelectric material Si0,8Ge0,2P0,022 for application in multisectional legs of thermoelectric elements // Журн. нано- та електрон. фізики. - 2016. - 8, 4 (ч. 1).
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Shtern Yu. I. Investigation of nanostructured thermoelectric material Si0,8Ge0,2P0,022 for application in multisectional legs of thermoelectric elements // Журн. нано- та електрон. фізики. - 2016. - 8, № 4 (ч. 1).
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Ruvinskii M. A. Kinetic phenomena and thermoelectric properties of polycrystalline thin films based on PbSnAgTe compounds // Журн. нано- та електрон. фізики. - 2017. - 9, № 5.
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Rogacheva E. I. Kinetic properties and defect structure of p- and n-CuInSe2 // Functional Materials. - 2002. - 9, № 2.
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Lastapis M. Low temperature electron transport on semiconductor surfaces. — 2003 // Физика низ. температур.
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Shwarts Yu. M. Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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Sabov T. M. Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 2.
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Burbelo R. Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 2.
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