Пошуковий запит: (<.>A=Borblik V$<.>) |
Загальна кількість знайдених документів : 14
Представлено документи з 1 до 14
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| 1. |
Kulish N. R. Self-consistent method for optimization of parameters of diode temperature sensors. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Borblik V. L. About manifestation of the piezojunction effect in diode temperature sensors // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 1.
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| 3. |
Borblik V. L. Revealing the hopping mechanism of conduction in heavily doped silicon diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 2.
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| 4. |
Borblik V. L. Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 3.
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| 5. |
Borblik V. L. Properties of junction diodes under conditions of bisotropic strains // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 1.
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| 6. |
Borblik V. L. A new method of extraction of a p - n diode series resistance from I - V characteristics and its application to analysis of low-temperature conduction of the diode base // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 4.
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| 7. |
Borblik V. L. Negative magnetoresistance of heavily doped silicon p - n junction // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 1.
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| 8. |
Aleinikov A. B. Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 3.
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| 9. |
Borblik V. L. Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 3.
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| 10. |
Borblik V. L. Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 2.
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| 11. |
Borblik V. L. New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 2.
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| 12. |
Borblik V. L. Electrostatics of the nanowire radial p-i-n diode // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 2.
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| 13. |
Borblik V. L. Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
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| 14. |
Borblik V. L. Diffusion length of non-equilibrium current carriers in nanowire radial p-n junctions: effect of the curvature // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2022. - 25, № 4.
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