Пошуковий запит: (<.>A=Litovchenko P$<.>) |
Загальна кількість знайдених документів : 24
Представлено документи з 1 до 20
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| 1. |
Litovchenko P. G. Semiconductor detectors with converters for measurement of a neutron flux. — 2000 // Укр. фіз. журн.
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| 2. |
Litovchenko P. G. Semiconductor sensors for dosimetry of epithermal neutrons. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 3. |
Kаrpenko А. Ya. Nuclear irradiation-induced superconductivity in the binary semiconductor InAs. — 2003 // Физика низ. температур.
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| 4. |
Litovchenko P. G. Effect of high-temperature treatment on the processes of oxygen precipitation and magnetic properties of monocrystalline Si irradiated by neutrons. — 2004 // Фотоэлектроника: Межвед. науч. сб.
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| 5. |
Konoreva O. V. Degradation-relaxation processes stimulated by structural defects in green gallium-phosphide light-emitting diodes. — 2006 // Укр. фіз. журн.
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| 6. |
Dolgolenko A. P. Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz). — 2007 // Ядер. фізика та енергетика.
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| 7. |
Tsmots V. M. Impact of pre-irradiation on the magnetic susceptibility of Cz - Si thermally treated at 700 - 1000 <$E bold symbol Р>C. — 2009 // Сенсор. електрон. і мікросистем. технології.
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| 8. |
Litovchenko P. G. Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 2.
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| 9. |
Kudin A. P. Influence of structural defects on photoconductivity of zinc diphosphide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 10. |
Groza A. A. Influence of the neutron irradiation on elctrooptical and structural properties of silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 11. |
Dolgolenko A. P. Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 12. |
Baranskyy P. I. Influence of the annealing of silicon crystals at 1200 <$E bold symbol Р>C on the Hall effect and magnetoresistance // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 3.
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| 13. |
Kanevsky S. O. Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 4.
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| 14. |
Dolgolenko A. P. Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 15. |
Dolgolenko A. P. The radiation hardness of pulled silicon doped with germanium // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 1.
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| 16. |
Litovchenko P. Peculiarities of neutron irradiation influence on GaP light-emitting structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 3.
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| 17. |
Hontaruk O. Radiative recombination in initial and electron-irradiated GaP crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 1.
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| 18. |
Dolgolenko A. P. Seebeck's effect in p-SiGe whisker samples // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 19. |
Gaidar G. P. The kinetic of point defect transformation during the annealing process in electron-irradiated silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 2.
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| 20. |
Dubovyi V. K. Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects // Functional Materials. - 2005. - 12, № 3.
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